The Collier Report of U.S. Government Contracting

Old School Reporting Using Modern Technology

Auriga Measurement Systems Llc as Auriga Microwave

  • Auriga Measurement Systems Llc as Auriga Microwave

  • View government funding actions
  • Chelmsford, MA 018242566
  • Estimated Number of Employees: 19
  • Estimated Annual Receipts: $4,656,519

Sampling of Federal Government Funding Actions/Set Asides

In order by amount of set aside monies.

  • $854,326 - Tuesday the 8th of May 2012
    Department Of Navy
    NAVAIR WARFARE CTR AIRCRAFT DIV LKE
    RESEARCH AND DEVELOPMENT SBIR PH II.5 TOPIC N07-007
  • $385,952 - Tuesday the 8th of May 2012
    Department Of Navy
    NAVAIR WARFARE CTR AIRCRAFT DIV LKE
    SBIR PHASE 2.5
  • $149,964 - Wednesday the 22nd of February 2012
    Department Of Navy
    SPACE AND NAVAL WARFARE SYSTEMS
    RESEARCH
  • $149,790 - Wednesday the 11th of April 2012
    Department Of Air Force
    FA8650 USAF AFMC AFRL/RQK
    MONOLITHIC S-BAND MULTICHANNEL TRANSMIT/RECIEVE MODULE ANTENNAS
  • $149,773 - Wednesday the 11th of April 2012
    Department Of Navy
    NAVSEA HQ
    OPTION I
  • $149,752 - Thursday the 5th of July 2012
    Department Of Air Force
    FA8650 USAF AFMC AFRL/RQK
    20 GHZ RADIATION HARDENED SSPA FOR SATCOM SYSTEMS
  • $124,091 - Tuesday the 13th of November 2012
    National Aeronautics And Space Administration
    NASA SHARED SERVICES CENTER
    ACHIEVING VERY HIGH-POWER AMPLIFICATION WITH MAXIMUM EFFICIENCY AT X- AND KA-BAND IS CHALLENGING USING SOLID-STATE TECHNOLOGY. GALLIUM ARSENIDE (GAAS) HAS BEEN THE MATERIAL OF CHOICE FOR HIGH-POWER MICROWAVE SYSTEMS AT THESE FREQUENCIES FOR DECADES. UNTIL ONLY RECENTLY, GAAS WAS UNCHALLENGED AT KA BAND FOR SOLID-STATE AMPLIFICATION. UNFORTUNATELY, THE LOW POWER DENSITY OF GAAS REQUIRES EXTENSIVE COMBINING NETWORKS CONTRIBUTING TO LARGE AMPLIFIER SIZE AND LOW EFFICIENCY; NEITHER IS ACCEPTABLE IN NEXT-GENERATION HIGH-PERFORMANCE SYSTEMS. AURIGA WILL USE A 0.15 M GALLIUM NITRIDE (GAN) HIGH ELECTRON MOBILITY TRANSISTORS (HEMT) TO MEET THE FREQUENCY BAND AND POWER LEVEL REQUIRED. GAN HEMTS ARE HIGH-VOLTAGE AND HIGH POWER DENSITY DEVICES, RESULTING IN SMALLER, MORE EFFICIENT POWER AMPLIFIERS (PAS). COMPETING GAAS PHEMT TECHNOLOGY IS MORE MATURE AND READILY AVAILABLE, BUT CANNOT COMPETE WITH GAN'S ELECTRICAL AND THERMAL PERFORMANCE. AS GAN TRANSITIONS FROM LEADING-EDGE TO INDUSTRY STANDARD, ITS USAGE IS EXPANDING AND THE COST OF ENTRY IS DIMINISHING. A PRECISION HARMONIC TERMINATION CIRCUIT WILL BE USED TO ACHIEVE EXCEPTIONAL EFFICIENCY OPERATION. A LOW-LOSS POWER COMBINING TECHNIQUE WILL GENERATE HIGH POWER LEVELS. AURIGA'S EXPERIENCE WITH DEVICE PHYSICS, TRANSISTOR MODELING, AND HIGH-POWER DESIGN MAKE US UNIQUELY QUALIFIED TO OVERCOME THE CHALLENGES IN THIS PROGRAM.

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